Radiation response of pseudo-MOS transistors fabricated in hardened fully-depleted SIMOX SOI wafers

The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD (fully-depleted) SIMOX (Separation by Implanted Oxygen) SOI (Silicon-on-insulator) wafers is presented.At 1 Mrad(Si) radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from -115.5 to -1.9 V by the hardening procedure.The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown.The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.

作 者： BI Da-Wei ZHANG Zheng-Xuan ZHANG Shuai CHEN Ming YU Wen-Jie WANG Ru TIAN Hao LIU Zhang-Li   作者單位： The State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China  刊 名： 中國(guó)物理C(英文版)  ISTIC 英文刊名： CHINESE PHYSICS　C  年，卷(期)： 2009 33(10)  分類(lèi)號(hào)： O4  關(guān)鍵詞： SOI   pseudo-MOS transistor   total dose radiation   ion implantation  

【Radiation response of pseudo-MOS tra】相關(guān)文章：

Study on the response characteristics of adaptive focusing system for flying optics04-27

Establishment of Exposure-response Functions of Air Particulate Matter and Adverse Health Outcomes in China and Worldwid04-25

Nitrous oxide emission and reduction in a laboratory-incubated paddy soil response to pretreatment of water regime04-26

Rainfall-induced landslide stability analysis in response to transient pore pressure--A case study of natural terrain la04-27

Alpha-picolinic acid,a fungal toxin and mammal apoptosis-inducing agent,elicits hypersensitive-like response and enhance04-26